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|caption = Leo Esaki in 1959
|caption = Leo Esaki in 1959
|birth_date = {{birth date and age|1925|3|12}}
|birth_date = {{birth date and age|1925|3|12}}
|birth_place = [[Osaka]], [[Japan]]
|birth_place = [[Higashiōsaka]], [[Japan]]
|nationality = [[Japan]]
|nationality = [[Japan]]
|field = [[Applied physics]]
|field = [[Applied physics]]
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He is known for his invention of the [[Esaki diode]], which exploited that phenomenon. This research was done when he was with Tokyo Tsushin Kogyo (now known as [[Sony]]). He has also contributed in being a pioneer of the semiconductor [[superlattice]] while he was with IBM.
He is known for his invention of the [[Esaki diode]], which exploited that phenomenon. This research was done when he was with Tokyo Tsushin Kogyo (now known as [[Sony]]). He has also contributed in being a pioneer of the semiconductor [[superlattice]] while he was with IBM.


Esaki was born on March 12, 1925 in [[Osaka]], [[Japan]].<ref>Esaki, Leo, "Long Journey into Tunneling," [http://nobelprize.org/nobel_prizes/physics/laureates/1973/esaki-lecture.html Nobel Lecture], Dec 12, 1973.</ref> He studied at the [[University of Tokyo]].
Esaki was born on March 12, 1925 in [[Higashiōsaka]], [[Japan]].<ref>Esaki, Leo, "Long Journey into Tunneling," [http://nobelprize.org/nobel_prizes/physics/laureates/1973/esaki-lecture.html Nobel Lecture], Dec 12, 1973.</ref> He studied at the [[University of Tokyo]].


==References==
==References==

Latest revision as of 16:04, 7 June 2024

Leo Esaki
Leo Esaki in 1959
Born (1925-03-12) March 12, 1925 (age 99)
Higashiōsaka, Japan
NationalityJapan
Alma materUniversity of Tokyo
Known forelectron tunneling, Esaki diode
AwardsStuart Ballantine Medal (1961)
Nobel Prize in Physics (1973)
IEEE Medal of Honor
Scientific career
FieldsApplied physics

Reona Esaki (江崎 玲於奈 Esaki Reona, born March 12, 1925), also known as Leo Esaki, is a Japanese physicist. He was awarded the Nobel Prize in Physics in 1973 with Ivar Giaever and Brian David Josephson. He won the prize for his discovery of the phenomenon of electron tunneling. [1]

He is known for his invention of the Esaki diode, which exploited that phenomenon. This research was done when he was with Tokyo Tsushin Kogyo (now known as Sony). He has also contributed in being a pioneer of the semiconductor superlattice while he was with IBM.

Esaki was born on March 12, 1925 in Higashiōsaka, Japan.[2] He studied at the University of Tokyo.

References[change | change source]

  1. ↑ Esaki, L.; Tsu, R. (1970). "Superlattice and Negative Differential Conductivity in Semiconductors". IBM Journal of Research and Development. 14: 61–65. doi:10.1147/rd.141.0061.
  2. ↑ Esaki, Leo, "Long Journey into Tunneling," Nobel Lecture, Dec 12, 1973.

Other websites[change | change source]



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