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{{redirect|TiN|the chemical element|Tin}}▼
{{short description|Chemical compound}}
▲{{redirect|TiN|the chemical element|Tin}}
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| Section3 = {{Chembox Structure
| Structure_ref=<ref>{{cite journal |last=Lengauer |first=Walter |year=1992 |title=Properties of bulk δ-TiN<sub>
| CrystalStruct = [[Sodium Chloride|Cubic]], [[Pearson symbol|cF8]]
| SpaceGroup = Fm<u style="text-decoration:overline">3</u>m, No. 225
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TiN will oxidize at 800 °C in a normal atmosphere. TiN has a brown color, and appears gold when applied as a coating. It is chemically stable at 20 °C, according to laboratory tests, but can be slowly attacked by concentrated acid solutions with rising temperatures.<ref name=prop/>
Depending on the substrate material and surface finish, TiN will have a [[coefficient of friction]] ranging from 0.4 to 0.9 against another TiN surface (non-lubricated). The typical TiN formation has a [[crystal structure]] of [[Rock-salt structure|NaCl-type]] with a roughly 1:1 [[stoichiometry]]; TiN<sub>x</sub> compounds with ''x'' ranging from 0.6 to 1.2 are, however, thermodynamically stable.<ref>{{cite book |first=L.E. |last=Toth |year=1971 |title=Transition Metal Carbides and Nitrides |publisher=Academic Press |location=New York, NY |isbn=978-0-12-695950-5}}</ref>
TiN becomes [[superconductivity|superconducting]] at cryogenic temperatures, with critical temperature up to 6.0 K for single crystals.<ref>{{cite journal |last1=Spengler |first1=W. |display-authors=etal |year=1978 |title=Raman scattering, superconductivity, and phonon density of states of stoichiometric and nonstoichiometric TiN |journal=[[Physical Review]] B |volume=17 |issue=3 |pages=1095–1101 |doi=10.1103/PhysRevB.17.1095 |bibcode=1978PhRvB..17.1095S}}</ref> Superconductivity in thin-film TiN has been studied extensively, with the superconducting properties strongly varying depending on sample preparation, up to complete suppression of superconductivity at a [[Superconductor Insulator Transition|superconductor-insulator transition]].<ref>{{cite journal |last1=Baturina |first1=T.I. |display-authors=etal |year=2007 |title=Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films |journal=[[Physical Review]] Letters |volume=99 |issue=25 |pages=257003 |pmid=18233550 |arxiv=0705.1602 |doi=10.1103/PhysRevLett.99.257003 |bibcode=2007PhRvL..99y7003B |s2cid=518088}}</ref> A thin film of TiN was chilled to near [[absolute zero]], converting it into the first known [[superinsulator]], with resistance suddenly increasing by a factor of 100,000.<ref>{{cite news |title=Newly discovered 'superinsulators' promise to transform materials research, electronics design |date=2008-04-07 |website=PhysOrg.com |url=http://www.physorg.com/news126797387.html}}</ref>
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Because of TiN's metallic gold color, it is used to coat [[costume jewelry]] and automotive trim for decorative purposes. TiN is also widely used as a top-layer coating, usually with [[nickel]] (Ni) or [[chromium]] (Cr) plated substrates, on consumer plumbing fixtures and door hardware. As a coating it is used in [[aerospace]] and military applications and to protect the sliding surfaces of [[suspension (vehicle)|suspension]] forks of [[bicycle]]s and [[motorcycle]]s as well as the shock shafts of [[radio controlled car]]s. TiN is also used as a protective coating on the moving parts of many rifles and semi automatic firearms, as its extremely durable. As well as being durable, it's also extremely smooth making removing the carbon build up extremely easy. TiN is non-toxic, meets [[Food and Drug Administration|FDA]] guidelines and has seen use in [[medical device]]s such as [[scalpel]] blades and orthopedic [[Bone cutter|bone saw]] blades where sharpness and edge retention are important.<ref>{{cite web |title=Products |publisher=IonFusion Surgical |url=http://www.ionfusion.com |access-date=2009-06-25}}</ref> TiN coatings have also been used in implanted [[prosthesis|prostheses]] (especially [[hip replacement]] implants) and other medical implants.
Though less visible, [[thin film]]s of TiN are also used in [[microelectronics]], where they serve as a [[electrical conductivity|conductive]] connection between the active device and the metal contacts used to operate the circuit, while acting as a [[diffusion barrier]] to block the [[diffusion]] of the metal into the silicon. In this context, TiN is classified as a "barrier metal" (electrical resistivity ~ 25 µΩ·cm<ref name=th2/>), even though it is clearly a [[ceramic]] from the perspective of [[chemistry]] or mechanical behavior. Recent chip design in the 45 nm technology and beyond also makes use of TiN as a "metal" for improved [[transistor]] performance. In combination with [[gate dielectric]]s (e.g. HfSiO) that have a higher [[permittivity]] compared to standard [[Silicon dioxide|SiO<sub>2</sub>]] the gate length can be scaled down with low [[Subthreshold leakage|leakage]], higher drive current and the same or better [[threshold voltage]].<ref>{{cite journal |first1=Thaddeus G. |last1=Dziura |first2=Benjamin |last2=Bunday |first3=Casey |last3=Smith |first4=Muhammad M. |last4=Hussain |first5=Rusty |last5=Harris |first6=Xiafang |last6=Zhang |first7=Jimmy M. |last7=Price |year=2008 |title=Measurement of high-k and metal film thickness on FinFET sidewalls using scatterometry |journal=Proceedings of SPIE |volume=6922 |issue=2 |page=69220V |doi=10.1117/12.773593 |series=Metrology, Inspection, and Process Control for Microlithography XXII |bibcode=2008SPIE.6922E..0VD |s2cid=120728898}}</ref> Additionally, TiN thin films are currently under consideration for coating [[zirconium alloy]]s for [[accident-tolerant fuel|accident-tolerant nuclear fuels]].<ref>{{Cite journal |last1=Tunes |first1=Matheus A. |last2=da Silva |first2=Felipe C. |last3=Camara |first3=Osmane |last4=Schön |first4=Claudio G. |last5=Sagás |first5=Julio C. |last6=Fontana |first6=Luis C. |last7=Donnelly |first7=Stephen E. |last8=Greaves |first8=Graeme |last9=Edmondson |first9=Philip D. |display-authors=6 |date=December 2018 |title=Energetic particle irradiation study of TiN coatings: are these films appropriate for accident tolerant fuels? |journal=Journal of Nuclear Materials |volume=512 |pages=239–245 |doi=10.1016/j.jnucmat.2018.10.013 |bibcode=2018JNuM..512..239T |url=https://pure.hud.ac.uk/ws/files/14781227/preprint_TiN.pdf}}</ref><ref>{{Cite journal |last1=Alat |first1=Ece |last2=Motta |first2=Arthur T. |last3=Comstock |first3=Robert J. |last4=Partezana |first4=Jonna M. |last5=Wolfe |first5=Douglas E. |date=September 2016 |title=Multilayer (TiN, TiAlN) ceramic coatings for nuclear fuel cladding |journal=Journal of Nuclear Materials |volume=478 |pages=236–244 |doi=10.1016/j.jnucmat.2016.05.021 |doi-access=free |bibcode=2016JNuM..478..236A}}</ref>
Owing to their high biostability, TiN layers may also be used as electrodes in [[bioelectronics|bioelectronic applications]] <ref name= SCT2010>{{cite journal | last1 = Birkholz | first1 = M. | last2 = Ehwald | first2 = K.-E. | last3 = Wolansky | first3 = D. | last4 = Costina | first4 = I. | last5 = Baristiran-Kaynak | first5 = C. | last6 = Fröhlich | first6 = M. | last7 = Beyer | first7 = H. | last8 = Kapp | first8 = A. | last9 = Lisdat | first9 = F. |display-authors=6 | year = 2010 | title = Corrosion-resistant metal layers from a CMOS process for bioelectronic applications | journal = Surf. Coat. Technol. | volume = 204 | issue = 12–13 | pages = 2055–2059 | doi = 10.1016/j.surfcoat.2009.09.075 | url = https://www.researchgate.net/publication/230817001}}</ref> like in intelligent [[implant (medicine)|implants]] or in-vivo [[biosensors]] that have to withstand the severe corrosion caused by [[body fluid]]s. TiN electrodes have already been applied in the [[visual prosthesis|subretinal prosthesis project]] <ref name= Haem2002>{{cite journal | last1 = Hämmerle | first1 = Hugo | last2 = Kobuch | first2 = Karin | last3 = Kohler | first3 = Konrad | last4 = Nisch | first4 = Wilfried | last5 = Sachs | first5 = Helmut | last6 = Stelzle | first6 = Martin | year = 2002 | title = Biostability of micro-photodiode arrays for subretinal implantation | journal = Biomaterials | volume = 23 | issue = 3 | pages = 797–804 | doi = 10.1016/S0142-9612(01)00185-5 | pmid = 11771699}}</ref> as well as in biomedical microelectromechanical systems ([[BioMEMS]]).<ref name= AdFM2011>{{cite journal | last1 = Birkholz | first1 = M. | last2 = Ehwald | first2 = K.-E. | last3 = Kulse | first3 = P. | last4 = Drews | first4 = J. | last5 = Fröhlich | first5 = M. | last6 = Haak | first6 = U. | last7 = Kaynak | first7 = M. | last8 = Matthus | first8 = E. | last9 = Schulz | first9 = K. | last10 = Wolansky | first10 = D. |display-authors=6 | year = 2011 | title = Ultrathin TiN membranes as a technology platform for CMOS-integrated MEMS and BioMEMS devices | journal = Advanced Functional Materials | volume = 21 | issue = 9 | pages = 1652–1654 | doi = 10.1002/adfm.201002062}}</ref>
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